All Transistors. 2N6603 Datasheet

 

2N6603 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6603

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 3000 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO128

2N6603 Transistor Equivalent Substitute - Cross-Reference Search

 

2N6603 Datasheet (PDF)

5.1. 2n3773 2n6609.pdf Size:205K _motorola

2N6603
2N6603

Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid driv

5.2. 2n3773 2n6609.pdf Size:80K _central

2N6603

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.3. 2n3773 2n6609.pdf Size:93K _onsemi

2N6603
2N6603

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http://onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feature

Datasheet: 2N6597 , 2N6598 , 2N6599 , 2N66 , 2N660 , 2N6600 , 2N6601 , 2N6602 , BC547 , 2N6604 , 2N6609 , 2N661 , 2N6617 , 2N6618 , 2N6619 , 2N662 , 2N6620 .

 


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