2N6603 Specs and Replacement
Type Designator: 2N6603
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3000 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO128
2N6603 Substitution
- BJT ⓘ Cross-Reference Search
2N6603 datasheet
Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid d... See More ⇒
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http //onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feat... See More ⇒
Detailed specifications: 2N6597, 2N6598, 2N6599, 2N66, 2N660, 2N6600, 2N6601, 2N6602, BD222, 2N6604, 2N6609, 2N661, 2N6617, 2N6618, 2N6619, 2N662, 2N6620
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