All Transistors. ZTX753DCSM Datasheet

 

ZTX753DCSM Datasheet, Equivalent, Cross Reference Search


   Type Designator: ZTX753DCSM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: LCC2

 ZTX753DCSM Transistor Equivalent Substitute - Cross-Reference Search

   

ZTX753DCSM Datasheet (PDF)

 ..1. Size:33K  semelab
ztx753dcsm.pdf

ZTX753DCSM
ZTX753DCSM

ZTX753DCSMPNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)1.40 0.152.29 0.20 1.65 0.13 FEATURES(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR PNP2 3TRANSISTORS14A0.236 5rad. HERMETIC SURFACE MOUNT PACKAGE(0.009)6.22

 8.1. Size:62K  diodes
ztx752 ztx753.pdf

ZTX753DCSM
ZTX753DCSM

PNP SILICON PLANAR2 ZTX752MEDIUM POWER TRANSISTORS3 ZTX753ISSUE 2 JULY 94 T V I V i i I V VV VE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I T I T II V

 9.1. Size:50K  diodes
ztx756 ztx757.pdf

ZTX753DCSM
ZTX753DCSM

PNP SILICON PLANAR MEDIUM POWERZTX756HIGH VOLTAGE TRANSISTORSZTX757ISSUE 2 JULY 94 T V I V i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I I

 9.2. Size:63K  diodes
ztx758.pdf

ZTX753DCSM
ZTX753DCSM

PNP SILICON PLANAR MEDIUM POWERZTX758HIGH VOLTAGE TRANSISTORISSUE 1 APRIL 94 T V I V i V V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I IT i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V

 9.3. Size:369K  diodes
ztx751.pdf

ZTX753DCSM
ZTX753DCSM

A Product Line ofDiodes IncorporatedZTX75160V PNP MEDIUM POWER TRANSISTOR IN E-LINE Features Mechanical Data BVCEO > -60V Case: E-Line (TO-92 Compatible) IC = -2A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -6A Peak Pulse Current UL Flammability Classification Rating 94V-0 TJ up to +200C for Hi

 9.4. Size:49K  diodes
ztx754 ztx755.pdf

ZTX753DCSM
ZTX753DCSM

PNP SILICON PLANARZTX754MEDIUM POWER TRANSISTORSZTX755ISSUE 2 JULY 94 T V I V i i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I I 1

 9.5. Size:61K  diodes
ztx750 ztx751.pdf

ZTX753DCSM
ZTX753DCSM

PNP SILICON PLANAR ZTX750MEDIUM POWER TRANSISTORSZTX751ISSUE 2 JULY 94 T . V I V i i I V VE-LineV V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I T I T II

 9.6. Size:412K  foshan
ztx750 3ca750.pdf

ZTX753DCSM
ZTX753DCSM

ZTX750(3CA750) PNP /SILICON PNP TRANSISTOR :/Purpose: Medium power amplifier applications. :/Features: High P and I . C C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -45 V CEO V -5.0 V EBO I -2.0 A

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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