2SD1899-Z Datasheet and Replacement

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

Transys ElectronicsL I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25) 2. COLLECTOR Collector current 3. EMITTER ICM: 3 A 1 2 3 Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARA

2SD1899-Z(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

isc Silicon NPN Power Transistor 2SD1899-ZDESCRIPTIONLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh transition frequency applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V

isc Silicon NPN Power Transistors 2SD1899-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SB1261-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

2SD1899 Transistor(NPN)1.BASE TO-252-2L2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti

2SD1899NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1MAXIMUM RATINGS (TA=25 unless otherwise noted)D-PAK(TO-252)SymbolParameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 60VVEmitter-Base Voltage VEBO7Collector Current -Continuous IC 3 ACollector Power Dissipation PC 1 WJunction Tempera

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f TLow VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications

isc Silicon NPN Power Transistor 2SD1899DESCRIPTIONLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh transition frequency applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V