2SD1005-V Datasheet. Specs and Replacement

Type Designator: 2SD1005-V  📄📄 

SMD Transistor Code: BV

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 160 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: SOT89

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2SD1005-V datasheet

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2SD1005-V

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2SD1005-V

2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90 180 1... See More ⇒

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2SD1005-V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO C... See More ⇒

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2SD1005-V

2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Coll... See More ⇒

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Detailed specifications: 2SD1898-P, 2SD1898-Q, 2SD1898-R, 2SD1899-K, 2SD1899-L, 2SD1899-M, 2SD1899-Z, 2SD1005-U, D667, 2SD1005-W, 2SD1164-Z, 2SD1484KFRA, 2SD1949FRA, 2SD1499-P, 2SD1583-Z, 2SD1584-Z, 2SD1781KFRA

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