All Transistors. 2SD1164-Z Datasheet

 

2SD1164-Z Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1164-Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO252

 2SD1164-Z Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1164-Z Datasheet (PDF)

 7.1. Size:228K  nec
2sd1164.pdf

2SD1164-Z
2SD1164-Z

 7.2. Size:1663K  kexin
2sd1164.pdf

2SD1164-Z
2SD1164-Z

SMD Type TransistorsNPN Darlington Transistors2SD1164TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V0.1270.80+0.1 max-0.11 Base+ 0.12.3 0.60- 0.12 Collector+0.153 Emitter4.60 -0.154 Collector Absolute Maximum Ratings Ta = 25

 8.1. Size:219K  toshiba
2sd1160.pdf

2SD1164-Z
2SD1164-Z

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V

 8.2. Size:40K  renesas
2sd1163.pdf

2SD1164-Z
2SD1164-Z

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.3. Size:36K  no
2sd1162.pdf

2SD1164-Z

 8.4. Size:37K  no
2sd1169.pdf

2SD1164-Z

 8.5. Size:69K  wingshing
2sd1168.pdf

2SD1164-Z

NPN TRIPLE DIFFUSED2SD1168 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

 8.6. Size:476K  semtech
st2sd1163a.pdf

2SD1164-Z
2SD1164-Z

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO 150 VCollector Emitter Voltage VCEO 6 VEmitter Base Voltage VEBO 7 ACollector Current IC 10 ACollector Peak Current ICP 20 ACollector Surge

 8.7. Size:207K  inchange semiconductor
2sd1168.pdf

2SD1164-Z
2SD1164-Z

isc Silicon NPN Power Transistor 2SD1168DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.8. Size:214K  inchange semiconductor
2sd1162.pdf

2SD1164-Z
2SD1164-Z

isc Silicon NPN Darlington Power Transistor 2SD1162DESCRIPTIONHigh DC Current Gain-: h = 400(Min.)@I = 2AFE CHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, low speed switching industrialuse.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 8.9. Size:119K  inchange semiconductor
2sd1163 2sd1163a.pdf

2SD1164-Z
2SD1164-Z

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS TV horizontal deflection output, PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SD1

 8.10. Size:206K  inchange semiconductor
2sd1163a.pdf

2SD1164-Z
2SD1164-Z

isc Silicon NPN Power Transistor 2SD1163ADESCRIPTIONCollector Current: I = 7ACCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.11. Size:212K  inchange semiconductor
2sd1163.pdf

2SD1164-Z
2SD1164-Z

isc Silicon NPN Power Transistor 2SD1163DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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