BULD118D-1 Datasheet, Equivalent, Cross Reference Search
Type Designator: BULD118D-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO251
BULD118D-1 Transistor Equivalent Substitute - Cross-Reference Search
BULD118D-1 Datasheet (PDF)
buld118d-1.pdf
BULD118D-1HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED321APPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLEIPAKTRANSISTOR LOW POWER CONVERT
buld1101e.pdf
BULD1101EHigh voltage fast-switching NPN Power TransistorGeneral features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed33 In compliance with the 2002/93/EC European 2Directive 11DPAK IPAKDescriptionTO-252 TO-251The device is manufactured using high voltage Multi
buld128d1.pdf
BULD128D-1HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE ORDER CODES : BULD128DA-1 ANDBULD128DB-1 NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR3RELIABLE OPERATION21 VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEIPAKAPPLICATIONS:(TO-251) ELECT
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
