BULK128D-B Datasheet. Specs and Replacement
Type Designator: BULK128D-B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: SOT82
BULK128D-B Substitution
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BULK128D-B datasheet
BULK128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION 3 2 VERY HIGH SWITCHING SPEED 1 APPLICATIONS SOT-82 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTI... See More ⇒
BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE ORDERING CODES BULK128D-A AND BULK128D-B NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR SOT-82 FLUORESCENT LIGHTING FLYBACK AND FORWA... See More ⇒
BULK128 High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting SOT-82 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium... See More ⇒
Detailed specifications: BU406A8, BU508B, BU508C, BU941A, BU941B, BU941ZTFP, BULD118D-1, BULD39DT4, 13007, BUL741FP, BUL742, BUL743, BUL98, BUL1102EFP, BUL123S, BUL128D, BUL128D-B
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