BUL5555 Datasheet. Specs and Replacement

Type Designator: BUL5555  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 1050 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 14 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 BUL5555 Substitution

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BUL5555 datasheet

 ..1. Size:466K  blue-rocket-elect

bul5555.pdf pdf_icon

BUL5555

BUL5555(BR3DD5555R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , Fast speed switching, Wide SOA. / Applications High voltage switch mode,suitable for electro... See More ⇒

 9.1. Size:10K  semelab

bul55asmd.pdf pdf_icon

BUL5555

BUL55ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 7A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒

 9.2. Size:10K  semelab

bul55bsmd.pdf pdf_icon

BUL5555

BUL55BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 250V IC = 8A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒

Detailed specifications: BUL53B-SM, BUL53BSMD, BUL54A-SM, BUL54ASMD, BUL54A-T257F, BUL54A-TO5, BUL54BSMD, TIP36CP, 9014, BUL55ASMD, BUL55BSMD, BUL56ASMD, BUL56BSMD, BUL57AN2A, BUL57AN2B, BUL58ASMD, BUL58BSMD

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