BUL55BSMD Datasheet and Replacement
Type Designator: BUL55BSMD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 8 A
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO276AB
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BUL55BSMD Datasheet (PDF)
bul55bsmd.pdf

BUL55BSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 250V IC = 8A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bul55asmd.pdf

BUL55ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bul5555.pdf

BUL5555(BR3DD5555R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , Fast speed switching, Wide SOA. / Applications High voltage switch mode,suitable for electro
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: KT8107D2 | DC5001 | 2SC1964 | UN9217R | 2N1056 | 2SC999A | ECG2306
Keywords - BUL55BSMD transistor datasheet
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History: KT8107D2 | DC5001 | 2SC1964 | UN9217R | 2N1056 | 2SC999A | ECG2306



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