All Transistors. BUL57AN2A Datasheet

 

BUL57AN2A Datasheet and Replacement


   Type Designator: BUL57AN2A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 22 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 280 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO276AB
      - BJT Cross-Reference Search

   

BUL57AN2A Datasheet (PDF)

 0.1. Size:341K  semelab
 bul57an2a-b.pdf pdf_icon

BUL57AN2A

HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B High Voltage, High Current Hermetic Ceramic Surface Mount Package Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 200V VCEO Collector Emitter Volta

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MGT108G

Keywords - BUL57AN2A transistor datasheet

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