BUL57AN2A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL57AN2A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 22 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 280 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO276AB
BUL57AN2A Transistor Equivalent Substitute - Cross-Reference Search
BUL57AN2A Datasheet (PDF)
bul57an2a-b.pdf
HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B High Voltage, High Current Hermetic Ceramic Surface Mount Package Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 200V VCEO Collector Emitter Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CV7342A-0 | BUH1015HI | CZD8050 | CX704C
History: CV7342A-0 | BUH1015HI | CZD8050 | CX704C
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