KA4A4L Datasheet. Specs and Replacement
Type Designator: KA4A4L 📄📄
SMD Transistor Code: S4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
KA4A4L Substitution
- BJT ⓘ Cross-Reference Search
KA4A4L datasheet
ka4a3 ka4a4 ka4f3 ka4f4 ka4l3 ka4l4.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: BUL56ASMD, BUL56BSMD, BUL57AN2A, BUL57AN2B, BUL58ASMD, BUL58BSMD, BUL62A, KA4A3Q, 2N4401, KA4A4M, KA4A4P, KA4A4Z, KA4F3M, KA4F3P, KA4F3R, KA4F4M, KA4F4N
Keywords - KA4A4L pdf specs
KA4A4L cross reference
KA4A4L equivalent finder
KA4A4L pdf lookup
KA4A4L substitution
KA4A4L replacement
