KA4L3Z Datasheet, Equivalent, Cross Reference Search
Type Designator: KA4L3Z
SMD Transistor Code: F4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SC75 USM
KA4L3Z Transistor Equivalent Substitute - Cross-Reference Search
KA4L3Z Datasheet (PDF)
9.1. Size:456K renesas
ka4a3 ka4a4 ka4f3 ka4f4 ka4l3 ka4l4.pdf
ka4a3 ka4a4 ka4f3 ka4f4 ka4l3 ka4l4.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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