KC807W Datasheet, Equivalent, Cross Reference Search
Type Designator: KC807W
SMD Transistor Code: 5A_5B_5C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT323
KC807W Transistor Equivalent Substitute - Cross-Reference Search
KC807W Datasheet (PDF)
kc807w.pdf
SMD Type TransistorsPNP TransistorsBC807W (KC807W) Features Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5
kc807a.pdf
SMD Type TransistorsSMD TypePNP TransistorsBC807A (KC807A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFor general AF applications.1 2+0.1+0.050.95 -0.1 0.1 -0.01High collector current.+0.11.9 -0.1High current gain.Low collector-emitter saturation voltage.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
kc807.pdf
SMD Type TransistorsPNP Silicon AF TransistorsKC807(BC807)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesFor general AF applications.12+0.1+0.050.95-0.1 0.1-0.01High collector current.+0.11.9-0.1High current gain.Low collector-emitter saturation voltage.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollect
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
