KC817W-40 Specs and Replacement
Type Designator: KC817W-40
SMD Transistor Code: 6C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT323
KC817W-40 Transistor Equivalent Substitute - Cross-Reference Search
KC817W-40 detailed specifications
kc817w.pdf
SMD Type Transistors NPN Transistors BC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt... See More ⇒
kc817.pdf
SMD Type Transistors NPN Transistors BC817 HF (KC817 HF) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 For general AF applications Low collector-emitter saturation voltage Complementary types BC807 HF ( PNP ) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra... See More ⇒
kc817a.pdf
SMD Type Transistors NPN Transistors BC817A (KC817A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 For general AF applications. High collector current. 1 2 High current gain. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector... See More ⇒
Detailed specifications: KC817-16 , KC817-25 , KC817-40 , KC817A-16 , KC817A-25 , KC817A-40 , KC817W-16 , KC817W-25 , BD139 , KC818-16 , KC818-25 , KC818-40 , KC818A-16 , KC818A-25 , KC818A-40 , KC818W-16 , KC818W-25 .
Keywords - KC817W-40 transistor specs
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