2N6653B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6653B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 188 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
2N6653B Transistor Equivalent Substitute - Cross-Reference Search
2N6653B Datasheet (PDF)
2n6653.pdf
2N6653Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6653.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
2n6653.pdf
isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta
Datasheet: 2N6649 , 2N665 , 2N6650 , 2N6653 , 2N6653-1 , 2N6653-2 , 2N6653-3 , 2N6653A , 2N2222 , 2N6654 , 2N6654-1 , 2N6654-2 , 2N6654A , 2N6654B , 2N6655 , 2N6655-1 , 2N6655-2 .
