KCW66 Specs and Replacement
Type Designator: KCW66
SMD Transistor Code: EF_EG_EH
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
KCW66 Substitution
- BJT ⓘ Cross-Reference Search
KCW66 datasheet
SMD Type Transistors NPN Transistors BCW66 (KCW66) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 BCW66 is subdivided into three groups F,G and H according to DC current gain Complementary to BCW68 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto... See More ⇒
Detailed specifications: KMMT493, KMMT718, KMMT720, KFS20, KDT1302, KDT1304, KDT1898, KCW65, D882, KCW68, KCW69, KCW70, KCW71, KCW72, KCW29, KCW30, KCW31
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