KCW66 Datasheet, Equivalent, Cross Reference Search
Type Designator: KCW66
SMD Transistor Code: EF_EG_EH
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
KCW66 Transistor Equivalent Substitute - Cross-Reference Search
KCW66 Datasheet (PDF)
..1. Size:977K kexin
kcw66.pdf
kcw66.pdf
SMD Type TransistorsNPN TransistorsBCW66 (KCW66)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 BCW66 is subdivided into three groups F,G and H according to DC current gain Complementary to BCW68 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
