KMBT3904 Datasheet, Equivalent, Cross Reference Search
Type Designator: KMBT3904
SMD Transistor Code: 1AM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
KMBT3904 Transistor Equivalent Substitute - Cross-Reference Search
KMBT3904 Datasheet (PDF)
kmbt3904.pdf
Product specificationKMBT3904(MMBT3904)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesEpitaxial planar die construction12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6VColl
kmbt3904.pdf
SMD Type TransistorsNPN TransistorsKMBT3904(MMBT3904)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesEpitaxial planar die construction12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Volta
kmbt3904dw.pdf
SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -
kmbt3904t.pdf
SMD Type TransistorsNPN TransistorsMMBT3904T (KMBT3904T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Small Package2 1 Complementary to MMBT3906T30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec
kmbt3906.pdf
Product specificationKMBT3906(MMBT3906)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesEpitaxial planar die construction12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector- Base Voltage VCBO -40 VCollector - Emitter Voltage VCEO -40 VEmitter - Base Voltage VEBO -5 VC
kmbt3906.pdf
SMD Type TransistorsPNP TransistorsKMBT3906(MMBT3906)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesEpitaxial planar die construction12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector- Base Voltage VCBO -40 VCollector - Emitter Voltage VCEO -40 VEmitter - Base Volt
kmbt3906dw.pdf
SMD Type TransistorsPNP TransistorsMMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren
kmbt3906t.pdf
SMD Type TransistorsPNP TransistorsMMBT3906T (KMBT3906T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Epitaxial Planar Die Construction2 1 Also Available in Lead Free Version Complementary to MMBT3904T30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter S
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
