2N6670 PDF and Equivalents Search

 

2N6670 Specs and Replacement

Type Designator: 2N6670

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 2N6670 Substitution

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2N6670 datasheet

 9.1. Size:137K  mospec

2n6676-78.pdf pdf_icon

2N6670

A A A ... See More ⇒

 9.2. Size:345K  no

2n6671.pdf pdf_icon

2N6670

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 9.3. Size:916K  no

2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf pdf_icon

2N6670

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2... See More ⇒

 9.4. Size:590K  semelab

2n6678m3a.pdf pdf_icon

2N6670

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A High Voltage, Fast Switching. Hermetic TO-254AA Isolated Metal Package. Ideally suited for PWM Regulators, Power Supplies and Converter Circuits Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 650V VCEX VBE = -1.5V Collector Emitt... See More ⇒

Detailed specifications: 2N6655-2, 2N6655A, 2N6655B, 2N6665, 2N6666, 2N6667, 2N6668, 2N6669, A733, 2N6671, 2N6672, 2N6673, 2N6674, 2N6675, 2N6676, 2N6677, 2N6678

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