CXT7410 Datasheet. Specs and Replacement
Type Designator: CXT7410
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
CXT7410 Substitution
- BJT ⓘ Cross-Reference Search
CXT7410 datasheet
CXT3410 NPN CXT7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CXT3410 and SILICON TRANSISTORS CXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operation... See More ⇒
Detailed specifications: CXT3410, CXT3820, CXT491E, CXT5401E, CXT5551E, CXT5551HC, CXT591E, CXT7090L, D667, CXT7820, RN2609, CTLM3410-M832D, CTLM3474-M832D, CTLM7410-M832D, CTLT3410-M621, CTLT5551-M832D, CTLT7410-M621
Keywords - CXT7410 pdf specs
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