All Transistors. 2N6689 Datasheet

 

2N6689 Datasheet and Replacement


   Type Designator: 2N6689
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO61
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2N6689 Datasheet (PDF)

 ..1. Size:60K  microsemi
 2n6674 2n6675 2n6689 2n6690.pdf pdf_icon

2N6689

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE

 9.1. Size:11K  semelab
 2n6687.pdf pdf_icon

2N6689

2N6687Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:11K  semelab
 2n6686.pdf pdf_icon

2N6689

2N6686Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:116K  inchange semiconductor
 2n6687.pdf pdf_icon

2N6689

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6687 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=

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Datasheet: 2N6674 , 2N6675 , 2N6676 , 2N6677 , 2N6678 , 2N6686 , 2N6687 , 2N6688 , 2SC1815 , 2N669 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2N67 , 2N670 , 2N6701 .

History: 2SC999A | 2SC215 | RN1101CT | 2N1056 | UN9217R | KT8107D2 | ECG2306

Keywords - 2N6689 transistor datasheet

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