BUP50A Datasheet. Specs and Replacement
Type Designator: BUP50A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3B
BUP50A Substitution
- BJT ⓘ Cross-Reference Search
BUP50A datasheet
BUP50A MECHANICAL DATA NPN MULTI-EPITAXIAL Dimensions in mm VERY FAST SWITCHING HIGH POWER TRANSISTOR 25.4 (1.0) FEATURES 10.92 1.57 (0.430) (0.062) DIFFUSED BY SEMEFAB VERY LOW VCE(sat) VERY FAST SWITCHING HIGH SWITCHING CURRENTS 1 2 HIGH RELIABILITY MILITARY OPTIONS AVAILABLE APPLICATIONS +0.4 4.1 0 4.0 0.1 +0.016 11.65 0.35 9.0 (0.161... See More ⇒
Detailed specifications: BUY48X, BUY80SMD, BUY82CECC, BUY82X, BUY92SMD, BUT11APX, BUR51S, BUR52S, C5198, BUP53R, BUW90, BUX50SMD, BUX50SMD05, BUX51SMD, BUX51SMD05, BUX52SMD, BUX52SMD05
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