BUW90 Datasheet. Specs and Replacement
Type Designator: BUW90
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO218
BUW90 Substitution
- BJT ⓘ Cross-Reference Search
BUW90 datasheet
isc Silicon NPN Power Transistor BUW90 DESCRIPTION High Current Capability Fast Switching Speed Low Saturation Voltage and High Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as Switching regulators Mot... See More ⇒
Detailed specifications: BUY82CECC, BUY82X, BUY92SMD, BUT11APX, BUR51S, BUR52S, BUP50A, BUP53R, S8050, BUX50SMD, BUX50SMD05, BUX51SMD, BUX51SMD05, BUX52SMD, BUX52SMD05, BUX21A, BUX24A
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