2DI75M-120 Specs and Replacement
Type Designator: 2DI75M-120
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 500 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 900 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: M209
2DI75M-120 Substitution
- BJT ⓘ Cross-Reference Search
2DI75M-120 datasheet
Detailed specifications: BUX99 , 2DA1201Y , 2DA1213O , 2DA1213Y , 2DA1971 , 2DB1182Q , 2DI75D-050A , 2DI75D-100 , SS8050 , 2DI75Z-120 , 2DI100A-120 , 2DI100D-050 , 2DI100D-100 , 2DI100Z-100 , 2DI100Z-120 , 2DI150A-120 , 2DI150D-050 .
History: 2SD669B
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