2DI150D-100 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI150D-100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1000 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 150 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M207
2DI150D-100 Transistor Equivalent Substitute - Cross-Reference Search
2DI150D-100 Datasheet (PDF)
..1. Size:390K fuji
2di150d-100.pdf
2di150d-100.pdf
FUJI POWER TRANSISTOR MODULE2DI150D-100 (150A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANS
8.2. Size:426K fuji
2di150a-120.pdf
2di150a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI150A-120 (150A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANS
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
