2DI50A-120 Specs and Replacement
Type Designator: 2DI50A-120
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 1200 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 70
Package: M206
2DI50A-120 Substitution
- BJT ⓘ Cross-Reference Search
2DI50A-120 datasheet
FUJI POWER TRANSISTOR MODULE 2DI50A-120 (50A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANSIS... See More ⇒
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Detailed specifications: 2DI150D-050 , 2DI150D-100 , 2DI150Z-100 , 2DI150Z-120 , 2DI200A-050 , 2DI200D-100 , RN4993HFE , EMT1DXV6 , NJW0281G , 2DI50D-050A , 2DI50D-100 , 2DI50M-050 , 2DI50M-120 , 2DI50Z-100 , 2DI50Z-120 , 2DI240A-055 , 2DI300A-050 .
History: 2SB1260-Q
Keywords - 2DI50A-120 pdf specs
2DI50A-120 cross reference
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2DI50A-120 pdf lookup
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2DI50A-120 replacement
History: 2SB1260-Q
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