2DI50D-100 PDF and Equivalents Search

 

2DI50D-100 Specs and Replacement

Type Designator: 2DI50D-100

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 400 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 1000 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: M204

 2DI50D-100 Substitution

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2DI50D-100 datasheet

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2DI50D-100

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2DI50D-100

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2DI50D-100

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 2di50a-120.pdf pdf_icon

2DI50D-100

FUJI POWER TRANSISTOR MODULE 2DI50A-120 (50A) Outline Drawings POWER TRANSISTOR MODULE POWER TRANSIS... See More ⇒

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Detailed specifications: 2DI150Z-100 , 2DI150Z-120 , 2DI200A-050 , 2DI200D-100 , RN4993HFE , EMT1DXV6 , 2DI50A-120 , 2DI50D-050A , 2SD669A , 2DI50M-050 , 2DI50M-120 , 2DI50Z-100 , 2DI50Z-120 , 2DI240A-055 , 2DI300A-050 , 2DI30A-120 , 2DI30D-050A .

History: 2SB1216T-E | 2G1027

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