2DI50D-100 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI50D-100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M204
2DI50D-100 Transistor Equivalent Substitute - Cross-Reference Search
2DI50D-100 Datasheet (PDF)
9.1. Size:108K fuji
2di50m-120.pdf
2di50m-120.pdf
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9.2. Size:394K fuji
2di50a-120.pdf
2di50a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI50A-120 (50A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
9.3. Size:97K fuji
2di50z-100.pdf
2di50z-100.pdf
For more information, contact:Collmer Semiconductor, Inc.P.O. Box 702708Dallas, TX 75370972-233-1589972-233-0481 Faxhttp://www.collmer.com
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
