2N670 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N670
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO30
2N670 Transistor Equivalent Substitute - Cross-Reference Search
2N670 Datasheet (PDF)
2n6707.pdf
Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1.
2n6705.pdf
Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1
2n6702.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting b
2n6703.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6703DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators and a variety of power switc
2n6704.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6704 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25)
Datasheet: 2N6688 , 2N6689 , 2N669 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2N67 , BC558 , 2N6701 , 2N6702 , 2N6703 , 2N6704 , 2N6705 , 2N6706 , 2N6707 , 2N6708 .
