2DI30A-120 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI30A-120
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 1200 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: M204
2DI30A-120 Transistor Equivalent Substitute - Cross-Reference Search
2DI30A-120 Datasheet (PDF)
2di30a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI30A-120 (30A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
2di300a-050.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2di30d-100.pdf
FUJI POWER TRANSISTOR MODULE2DI30D-100 (30A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .