2DI30D-050A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2DI30D-050A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M208
2DI30D-050A Transistor Equivalent Substitute - Cross-Reference Search
2DI30D-050A Datasheet (PDF)
7.1. Size:356K fuji
2di30d-100.pdf
2di30d-100.pdf
FUJI POWER TRANSISTOR MODULE2DI30D-100 (30A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
9.1. Size:149K fuji
2di300a-050.pdf
2di300a-050.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
9.2. Size:400K fuji
2di30a-120.pdf
2di30a-120.pdf
FUJI POWER TRANSISTOR MODULE2DI30A-120 (30A):Outline Drawings::::POWER TRANSISTOR MODULEPOWER TRANSIS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
