BC548CBK PDF and Equivalents Search

 

BC548CBK Specs and Replacement

Type Designator: BC548CBK

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: TO92

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BC548CBK datasheet

 ..1. Size:81K  diotec

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BC548CBK

BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2009-12-03 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Geh usematerial... See More ⇒

 8.1. Size:21K  fairchild semi

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BC548CBK

Discrete POWER & Signal Technologies BC548 BC548A BC548B BC548C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-... See More ⇒

 8.2. Size:314K  onsemi

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BC548CBK

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.3. Size:377K  taiwansemi

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BC548CBK

BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi... See More ⇒

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Detailed specifications: BC546ABK , BC546BBK , BC547ABK , BC547BA3 , BC547BBK , BC547CBK , BC548ABK , BC548BBK , 2N5401 , BC549BBK , BC549CBK , BC556ABK , BC556BBK , BC556C , BC557ABK , BC557BBK , BC557CBK .

History: BC556ABK | BUX77ASMD | BC549CBK | BUX54SMD05 | BUX53SMD | BUX78A-220M

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