All Transistors. 2N6706 Datasheet

 

2N6706 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6706
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 2N6706 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6706 Datasheet (PDF)

 9.1. Size:132K  cdil
2n6707.pdf

2N6706 2N6706

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1.

 9.2. Size:67K  cdil
2n6705.pdf

2N6706 2N6706

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1

 9.3. Size:118K  inchange semiconductor
2n6702.pdf

2N6706 2N6706

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

 9.4. Size:196K  inchange semiconductor
2n6703.pdf

2N6706 2N6706

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6703DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators and a variety of power switc

 9.5. Size:141K  inchange semiconductor
2n6704.pdf

2N6706 2N6706

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6704 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top