2N6711 Specs and Replacement
Type Designator: 2N6711
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2N6711 datasheet
9.3. Size:27K diodes
2n6716 2n6717 2n6718.pdf 
NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I ... See More ⇒
9.4. Size:26K diodes
2n6714 2n6715.pdf
NPN SILICON PLANAR 2N6714 MEDIUM POWER TRANSISTORS 2N6715 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I ... See More ⇒
9.5. Size:160K utc
2n6718.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power 850mW * High Current 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6... See More ⇒
9.6. Size:43K bocasemi
2n6714 2n6715 2n6716.pdf
IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 TO-237 Plastic Package 2N6715 2N6716 Boca Semiconductor Corp. BSC http //www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. 1 = EMITTER 2 = BA... See More ⇒
9.7. Size:506K jiangsu
2n6718.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 1 ... See More ⇒
9.8. Size:82K hsmc
h2n6718t.pdf
Spec. No. HT200701 HI-SINCERITY Issued Date 2007.08.01 Revised Date 2007.08.09 MICROELECTRONICS CORP. Page No. 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................... See More ⇒
9.9. Size:51K hsmc
h2n6718l.pdf
Spec. No. HE6218 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.05.03 MICROELECTRONICS CORP. Page No. 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features TO-92 High Power 850mW High Current 1A Absolute Maximum Ratings Maximum Temperatures St... See More ⇒
9.10. Size:44K hsmc
h2n6718v.pdf
Spec. No. HE6616 HI-SINCERITY Issued Date 1993.09.24 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718V is designed for general purpose medium power amplifier and switching. TO-126ML Absolute Maximum Ratings Maximum Temperatures Storage Temperature .................................................. See More ⇒
9.11. Size:259K lzg
2n6718 3da6718.pdf
2N6718 3DA6718 NPN /SILICON NPN TRANSISTOR Purpose Designed for general purpose medium power amplifier and switching. Features High V , large current. CEO /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO ... See More ⇒
9.12. Size:28K zetex
2n6717.pdf
NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I ... See More ⇒
Detailed specifications: 2N6704, 2N6705, 2N6706, 2N6707, 2N6708, 2N6709, 2N671, 2N6710, D209L, 2N6712, 2N6713, 2N6714, 2N6715, 2N6716, 2N6717, 2N6718, 2N6719
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