2SB1182GP Specs and Replacement

Type Designator: 2SB1182GP

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: TO252

 2SB1182GP Substitution

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2SB1182GP datasheet

 ..1. Size:80K  chenmko

2sb1182gp.pdf pdf_icon

2SB1182GP

CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (DPAK) DPAK * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .094 (2.38) CONSTRUCTION .086 (2.19) .022 (0.55) * PNP Switching Transistor .018 (0.45) (1) (3... See More ⇒

 7.1. Size:173K  rohm

2sb1188 2sb1182 2sb1240.pdf pdf_icon

2SB1182GP

Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-... See More ⇒

 7.2. Size:130K  rohm

2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf pdf_icon

2SB1182GP

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 ... See More ⇒

 7.3. Size:145K  rohm

2sb1182 2sb1240.pdf pdf_icon

2SB1182GP

Medium power transistor ( 32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.5 0.1 0.65Max. 0.65 0.1 Structure 0.75 0.9 0.5 0.1 Epitaxial planar type 0.55 0.1 PN... See More ⇒

Detailed specifications: 2SB1188GP, 2SB1188K, 2SB1197KGP, 2SB1197-P, 2SB1197-Q, 2SB1197-R, 2SB1198KFRA, 2SB1132GP, BDT88, 2SB1182P, 2SB1182Q, 2SB1182R, 2SB1184P, 2SB1184Q, 2SB1184R, 2SB0950, 2SB0950A

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