INA6001AC1 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

INA6001AC1 Specs and Replacement

Type Designator: INA6001AC1

SMD Transistor Code: AGG

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SOT23

INA6001AC1 Substitution

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INA6001AC1 datasheet

..1. Size:106K isahaya

ina6001ac1.pdf pdf_icon

INA6001AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒

6.1. Size:134K isahaya

ina6001ap1.pdf pdf_icon

PRELIMINARY INA6001AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INA6001AP1 is a silicon PNP transistor. 4.6 MAX It is designed with high voltage. 1.5 1.6 FEATURE Small package for easy mountin... See More ⇒

8.1. Size:157K isahaya

ina6006ac1.pdf pdf_icon

INA6006AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6006AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE... See More ⇒

8.2. Size:107K isahaya

ina6005ac1.pdf pdf_icon

INA6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6005AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=-400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector J... See More ⇒