All Transistors. HQ1A3M Datasheet

 

HQ1A3M Datasheet and Replacement


   Type Designator: HQ1A3M
   SMD Transistor Code: DQ
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 1 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT89
      - BJT Cross-Reference Search

   

HQ1A3M Datasheet (PDF)

 ..1. Size:283K  renesas
 hq1l2n hq1a3m hq1f3m hq1f3p hq1l2q hq1f2q hq1a4a.pdf pdf_icon

HQ1A3M

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | BCX55TA | 2N2872 | T11

Keywords - HQ1A3M transistor datasheet

 HQ1A3M cross reference
 HQ1A3M equivalent finder
 HQ1A3M lookup
 HQ1A3M substitution
 HQ1A3M replacement

 

 
Back to Top

 


 
.