HQ1A4A Datasheet, Equivalent, Cross Reference Search
Type Designator: HQ1A4A
SMD Transistor Code: DX
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R2 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT89
HQ1A4A Transistor Equivalent Substitute - Cross-Reference Search
HQ1A4A Datasheet (PDF)
..1. Size:283K renesas
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hq1l2n hq1a3m hq1f3m hq1f3p hq1l2q hq1f2q hq1a4a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
