All Transistors. HQ1F2Q Datasheet

 

HQ1F2Q Datasheet, Equivalent, Cross Reference Search


   Type Designator: HQ1F2Q
   SMD Transistor Code: DU
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 0.22 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT89

 HQ1F2Q Transistor Equivalent Substitute - Cross-Reference Search

   

HQ1F2Q Datasheet (PDF)

 ..1. Size:283K  renesas
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HQ1F2Q HQ1F2Q

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MM4209A | 2SD2252 | 2N6732 | DCX4710H | PN2222ARLRMG

 

 
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