HQ1F3M Specs and Replacement

Type Designator: HQ1F3M

SMD Transistor Code: DR

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT89

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HQ1F3M datasheet

 ..1. Size:283K  renesas

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HQ1F3M

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: HLB121, HN1B01FDW1T1G, HN2E04F, HN4B101J, HN4B102J, HQ1A3M, HQ1A4A, HQ1F2Q, S9014, HQ1F3P, HQ1L2N, HQ1L2Q, HR1A3M, HR1A4A, HR1A4M, HR1F2Q, HR1F3P

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