All Transistors. ISC6046AU1 Datasheet

 

ISC6046AU1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: ISC6046AU1
   SMD Transistor Code: BW
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT416

 ISC6046AU1 Transistor Equivalent Substitute - Cross-Reference Search

   

ISC6046AU1 Datasheet (PDF)

 ..1. Size:140K  isahaya
isc6046au1.pdf

ISC6046AU1 ISC6046AU1

ISC6046AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35high collector current, low VCEsat. FEATURE

 9.1. Size:152K  isahaya
isc6053am1.pdf

ISC6046AU1 ISC6046AU1

ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

 9.2. Size:189K  isahaya
isc6053au1.pdf

ISC6046AU1 ISC6046AU1

ISC6053AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35Designed with high collector current, low VCE(sat). FEATURE

 9.3. Size:330K  inchange semiconductor
isc60nm60l.pdf

ISC6046AU1 ISC6046AU1

isc N-Channel MOSFET Transistor ISC60NM60LFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3984

 

 
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