ISC6053AU1 Specs and Replacement
Type Designator: ISC6053AU1
SMD Transistor Code: BE_BF_BG
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.65 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 290 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SOT416
ISC6053AU1 Substitution
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ISC6053AU1 datasheet
ISC6053AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE ... See More ⇒
ISC6046AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON NPN EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35 high collector current, low VCE sat . FEATURE ... See More ⇒
isc N-Channel MOSFET Transistor ISC60NM60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
Detailed specifications: KZT789A, KZT849, KZT851, KZT853, ISC3581AS1, ISC4356AS1, ISC6046AU1, ISC6053AM1, 8550, ISD1447AS1, IT120, IT120A, ISC3242AS1, ISC3244AS1, ISC3247AS1, ISC3249AS1, KZT3906
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