ISA1283AS1 Datasheet. Specs and Replacement

Type Designator: ISA1283AS1  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 85 MHz

Collector Capacitance (Cc): 22 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: SC72

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ISA1283AS1 datasheet

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ISA1283AS1

SMALL-SIGNAL TRANSISTOR ISA1283AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1283AS1 is a silicon PNP epitaxial type transistor 4.0 designed for relay drive or power supply application. Complementary with 2SC5482. FEATURE 0.1 High voltage VCEO=-60V High collector current. IC=-1A 0.... See More ⇒

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ISA1283AS1

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ISA1283AS1

SMALL-SIGNAL TRANSISTOR ISA1284AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1284AS1 is a silicon PNP epitaxial type transistor 4.0 designed for high voltage application. Complementary with ISC3244AS1. FEATURE 0.1 High voltage VCEO=-100V High peak collector current. ICM=-800mA 0.45... See More ⇒

 8.3. Size:162K  isahaya

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ISA1283AS1

SMALL-SIGNAL TRANSISTOR ISA1286AS1 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1286AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high collector current and high hFE. Complementary with 2SC5484. FEATURE 0.1 High hFE hFE=400 to 800 High collector current. (IC=-1.5... See More ⇒

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Detailed specifications: KZT589, KZT2955, KZT3055, KZT3904, IMB10AFRA, IMB11AFRA, IR413, ISA1235AC1, BC556, ISA1284AS1, ISA1286AS1, ISA1287AS1, ISA1399AS1, ISA1530AC1, ISA1602AM1, ISA1603AM1, ISA1989AU1

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