ISA2166AM1 Datasheet. Specs and Replacement

Type Designator: ISA2166AM1  📄📄 

SMD Transistor Code: AW

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT323

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ISA2166AM1 datasheet

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ISA2166AM1

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ISA2166AM1

ISA2166AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISA2166AU1 is a silicon PNP epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE Hi... See More ⇒

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ISA2166AM1

ISA2188AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISA2188AU1 is a silicon PNP epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE Hi... See More ⇒

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ISA2166AM1

ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current IC MAX =-650mA Low collector to emitter saturation voltage VCE... See More ⇒

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Detailed specifications: ISA1287AS1, ISA1399AS1, ISA1530AC1, ISA1602AM1, ISA1603AM1, ISA1989AU1, ISA1993AS1, ISA1995AS1, TIP32C, ISA2166AU1, ISA2188AM1, ISA2188AU1, ISB1035AS1, IMB2AFRA, IMB3AFRA, IMD10AMT1G, IMD2AFRA

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