INC6001AC1 Datasheet. Specs and Replacement
Type Designator: INC6001AC1 📄📄
SMD Transistor Code: 6W
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 270 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
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INC6001AC1 datasheet
8.1. Size:142K isahaya
inc6002ac1.pdf 
INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit mm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1) FEATURE Super mini package for easy mounting. (3) (2) Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching ... See More ⇒
8.2. Size:106K isahaya
inc6008ac1.pdf
INC6008AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒
8.4. Size:134K isahaya
inc6008ap1.pdf
PRELIMINARY INC6008AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.5 1.6 It is designed with high voltage. FEATURE Small package for easy mounting... See More ⇒
8.5. Size:112K isahaya
inc6007ap1.pdf
PRELIMINARY INC6007AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC6007AP1 is a silicon NPN transistor. 4.6 MAX It is designed with high voltage. 1.5 1.6 FEATURE Small package for easy mounting. ... See More ⇒
8.6. Size:156K isahaya
inc6006ac1.pdf
INC6006AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE... See More ⇒
8.7. Size:143K isahaya
inc6006as1.pdf
PRELIMINARY INC6006AS1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi... See More ⇒
8.8. Size:132K isahaya
inc6005ac1.pdf
INC6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE... See More ⇒
Detailed specifications: IMH1AFRA, IMH20TR1G, IMH21, IMH23, IMH2AFRA, IMH3AFRA, IMH4AFRA, IMH5AFRA, C5198, INC6002AC1, INC6005AC1, INC6005AP1, INC6006AC1, INC6006AP1, INC6006AS1, INC6007AP1, INC6008AC1
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