INC6001AC1 Datasheet and Replacement
Type Designator: INC6001AC1
SMD Transistor Code: 6W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 270 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
INC6001AC1 Transistor Equivalent Substitute - Cross-Reference Search
INC6001AC1 Datasheet (PDF)
inc6002ac1.pdf
INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit mm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1) FEATURE Super mini package for easy mounting. (3) (2) Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching ... See More ⇒
inc6008ac1.pdf
INC6008AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒
Datasheet: IMH1AFRA , IMH20TR1G , IMH21 , IMH23 , IMH2AFRA , IMH3AFRA , IMH4AFRA , IMH5AFRA , C5198 , INC6002AC1 , INC6005AC1 , INC6005AP1 , INC6006AC1 , INC6006AP1 , INC6006AS1 , INC6007AP1 , INC6008AC1 .
History: CHDTD143TKGP | TP4123 | CHDTC114EUGP | TP4250A | TP5400 | IMX3FRA | TN918
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History: CHDTD143TKGP | TP4123 | CHDTC114EUGP | TP4250A | TP5400 | IMX3FRA | TN918
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