INC6002AC1 Datasheet. Specs and Replacement
Type Designator: INC6002AC1 📄📄
SMD Transistor Code: 4W
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 1.9 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT23
INC6002AC1 Substitution
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INC6002AC1 datasheet
INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit mm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1) FEATURE Super mini package for easy mounting. (3) (2) Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching ... See More ⇒
INC6008AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒
PRELIMINARY INC6008AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.5 1.6 It is designed with high voltage. FEATURE Small package for easy mounting... See More ⇒
Detailed specifications: IMH20TR1G, IMH21, IMH23, IMH2AFRA, IMH3AFRA, IMH4AFRA, IMH5AFRA, INC6001AC1, BC337, INC6005AC1, INC6005AP1, INC6006AC1, INC6006AP1, INC6006AS1, INC6007AP1, INC6008AC1, INC6008AP1
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