INC6005AC1 Datasheet PDF and Equivalents Search

 ..1. Size:132K  isahaya

 inc6005ac1.pdf

INC6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE... See More ⇒

 6.1. Size:134K  isahaya

 inc6005ap1.pdf

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 8.1. Size:142K  isahaya

 inc6002ac1.pdf

INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit mm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1) FEATURE Super mini package for easy mounting. (3) (2) Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching ... See More ⇒

 8.2. Size:106K  isahaya

 inc6008ac1.pdf

INC6008AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack... See More ⇒

 8.3. Size:148K  isahaya

 inc6006ap1.pdf

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 8.4. Size:134K  isahaya

 inc6008ap1.pdf

PRELIMINARY INC6008AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.5 1.6 It is designed with high voltage. FEATURE Small package for easy mounting... See More ⇒

 8.5. Size:112K  isahaya

 inc6007ap1.pdf

PRELIMINARY INC6007AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC6007AP1 is a silicon NPN transistor. 4.6 MAX It is designed with high voltage. 1.5 1.6 FEATURE Small package for easy mounting. ... See More ⇒

 8.6. Size:156K  isahaya

 inc6006ac1.pdf

INC6006AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE... See More ⇒

 8.7. Size:143K  isahaya

 inc6006as1.pdf

PRELIMINARY INC6006AS1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi... See More ⇒

 8.8. Size:107K  isahaya

 inc6001ac1.pdf

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