All Transistors. INC5003AH1 Datasheet

 

INC5003AH1 Datasheet and Replacement


   Type Designator: INC5003AH1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO252
 

 INC5003AH1 Substitution

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INC5003AH1 Datasheet (PDF)

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INC5003AH1

PRELIMINARY INC5003AH1 NoticeThis is not a final specification Some parametric are subject to change. SILICON NPN EPITAXIAL TYPEFEATURE OUTLINE DRAWING UNIT Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A 6.602.30Complementary INA5003AH1 5.340.50APPLICATION Motor drive, IGBT drive, DC/DC convertor 1 2 30.127

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INC5003AH1

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INC5003AH1

INC5004AC1 PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini

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INC5003AH1

INC5004AP1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin

Datasheet: IMT2AFRA , IMT3AFRA , IMT4FRA , IMX25 , IMX2FRA , INC5001AC1 , INC5001AP1 , INC5002AP1 , TIP31C , INC5004AC1 , INC5004AP1 , INC5006AC1 , IMX3FRA , IMX8FRA , IMZ1AFRA , IMZ2AFRA , IMZ88 .

History: 2SB244

Keywords - INC5003AH1 transistor datasheet

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