All Transistors. INA5002AC1 Datasheet

 

INA5002AC1 Datasheet and Replacement


   Type Designator: INA5002AC1
   SMD Transistor Code: AEK
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
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INA5002AC1 Datasheet (PDF)

 ..1. Size:232K  isahaya
ina5002ac1.pdf pdf_icon

INA5002AC1

INA5002AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE Super mini package for

 6.1. Size:128K  isahaya
ina5002ap1.pdf pdf_icon

INA5002AC1

INA5002AP1 For low frequency power amplify Silicon PNP EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INA5002AP1 is a silicon PNP epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=-60V CE BHigh collector current IC=-3A Low VCE(sat) VCEsat=-0.6

 8.1. Size:106K  isahaya
ina5005ac1.pdf pdf_icon

INA5002AC1

INA5005AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

 8.2. Size:132K  isahaya
ina5006ac1.pdf pdf_icon

INA5002AC1

INA5006AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: GT321B | ZXTD618MC | BUW11AF | 2SA814 | 2N385A | S791T | CMST5087

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