TTA008B Datasheet, Equivalent, Cross Reference Search
Type Designator: TTA008B
SMD Transistor Code: A008B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126N
TTA008B Transistor Equivalent Substitute - Cross-Reference Search
TTA008B Datasheet (PDF)
tta008b.pdf
TTA008BBipolar Transistors Silicon PNP Epitaxial TypeTTA008BTTA008BTTA008BTTA008B1. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A)(2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A)
tta004b.pdf
TTA004BBipolar Transistors Silicon PNP Epitaxial TypeTTA004BTTA004BTTA004BTTA004B1. Applications1. Applications1. Applications1. Applications Audio-Frequency Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = -160 V (min)(2) Complementary to TTC004B(3) Small collector output capacitance: Cob = 17 pF (typ.)(4) High tran
tta009.pdf
TTA009Bipolar Transistors Silicon PNP Epitaxial TypeTTA009TTA009TTA009TTA0091. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA)(2) High-speed switching : tstg = 300 ns (typ.) (IC = -1
tta003.pdf
TTA003Bipolar Transistors Silicon PNP Epitaxial TypeTTA003TTA003TTA003TTA0031. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA)(2) High-speed switching: tstg = 300 ns (typ.) 3. Packa
tta006b.pdf
TTA006B PNPTTA006BTTA006BTTA006BTTA006B1. 1. 1. 1. 2. 2. 2. 2. (1) : VCEO = -230 V ()(2) : Cob = 30 pF ()(3)
tta005.pdf
TTA005Bipolar Transistors Silicon PNP Epitaxial TypeTTA005TTA005TTA005TTA0051. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A)(2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -
tta0002.pdf
TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 V
tta0001.pdf
TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min.) Complementary to TTC0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 V
tta007.pdf
TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mmHigh-Speed Switching Applications DC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE(sat) = -0.2 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
