KTC2316 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC2316
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92L
KTC2316 Transistor Equivalent Substitute - Cross-Reference Search
KTC2316 Datasheet (PDF)
ktc2316.pdf
RoHS KTC2316TO-92L KTC2316 TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25) 3. BASE Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 120 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Para
ktc2347.pdf
SEMICONDUCTOR KTC2347TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. TV UHF OSCILLATOR APPLICATION.B CTV VHF MIXER APPLICATION.N DIM MILLIMETERSMAXIMUM RATING (Ta=25 )A 4.70 MAXEKB 4.80 MAXGCHARACTERISTIC SYMBOL RATING UNITC 3.70 MAXDD 0.45VCBOCollector-Base Voltage 35 VE 1.00F 1.27VCEOCollector-Emitter Voltage 15 VG 0.85
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5130
