KTA1297 Datasheet and Replacement

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTA1297 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low frequency power amplifier application Power switching application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emit

SEMICONDUCTOR KTA1298TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERS High DC Current Gain : hFE=100 320. _+2.93 0.20AB 1.30+0.20/-0.15 Low Saturation VoltageC 1.30 MAX2: VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20 Suitable

SEMICONDUCTOR KTA1296TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.B CFEATURES Low Saturation Voltage. : VCE(sat)=-0.5V(Max.) at IC=-2AN DIM MILLIMETERS Complementary to KTC3266. A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARAC

KTA1298 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER Low frequency power amplifier application 3. COLLECTOR Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -0.8 A

KTA1298 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V

SMD Type TransistorsPNP TransistorsKTA1298SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Power Dissipation: PC=200mW Collector Current: IC=-800mA1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Emitter Voltage VCEO -35 VCollector-Ba

Plastic-Encapsulate TransistorsFEATURESLow frequency power amplifier application KTA1298(PNP)Power switching applicationMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -35 VVCEOCollector-Emitter Voltage -30 VVEBOEmitter-Base Voltage -5 VICCollector Current -Continuous -800 mA1. BASECollector Power Dissipation PC 2